摘要: An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates was obtained with 18 nm Si3N4 grown by low pressure chemical vapor deposition (LPCVD) as gate insulator, The MIS-HEMTs show high Idss of 16.8 A@Vg=3 V, high breakdown voltage of 600 V and a low specific on-resistance of 2.3. The power device figure of merit V2BV/Ron=157MW·cm-2. Furthermore, the good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of below Ig=154 nA@Vds=600 V and Vgs=-14 V. The high Idss, low specific on-resistance and high breakdown voltage show the potential and advantages of GaN MIS-HEMTs for power switching applications.
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来自：
王亦
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分类：
材料科学
>>
纳米科学和纳米技术
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引用：
ChinaXiv:201612.00074
(或此版本
ChinaXiv:201612.00074V1)
DOI:J. Appl.Phys. 108, 014508 (2010)，doi: 10.1063/1.3428442
CSTR:32003.36.ChinaXiv.201612.00074.V1
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科创链TXID：
f0e799de-5284-4a6f-8326-2eb53765474c
- 推荐引用方式：
Zhili Zhang,Guohao Yu,Xiaodong Zhang,Shuxin Tan,Dongdong Wu,Kai Fu,Wei Huang,Yong Cai,Baoshun Zhang.1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator.中国科学院科技论文预发布平台.[DOI:J. Appl.Phys. 108, 014508 (2010)，doi: 10.1063/1.3428442 ]
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